PMST Power Device Static Parameter Test System

PMST Power Device Static Parameter Test System from Purcells, integrating multiple measurement and analysis functions, can accurately measure the static parameters of different package types of power devices (MOSFETs, BJTs, IGBTs, etc.), featuring high-voltage and high-current characteristics, μΩ-level accurate measurement, and nA-level current measurement capability. Supports measurement of power device junction capacitance in high-voltage mode, such as input capacitance, output capacitance, reverse transmission capacitance, etc.

PMST power device static parameter test system is configured with a variety of measurement unit modules, modular design and flexible testing methods, can greatly facilitate the user to add or upgrade the measurement module, to adapt to the measurement of power devices changing needs.

Test items

● Collector-emitter voltage VCES, collector-emitter breakdown voltage V(BR)CES, collector-emitter saturation voltage VCEsat

● Collector cutoff current ICES, gate leakage current IGES

● Gate-emitter voltage VGES, gate-emitter threshold voltage VGE(th)

● Input capacitance, output capacitance, reverse transfer capacitance

● Continuous-current diode drop VF

● I-V characteristic curve scan, C-V characteristic curve scan, etc.

System Advantages

1, IGBT and other high-power devices due to its power characteristics are very easy to generate a lot of heat, applying stress for a long time, the temperature rises rapidly, serious damage to the device, and does not meet the device operating characteristics. Purcells high-voltage module to establish the time less than 5ms, in the test process can reduce the object to be tested to be charged time of heating.

2, unrivaled ability to test leakage current under high voltage, test coverage is better than international brands. The specification of the majority of devices on the market shows that the leakage current of small modules at high temperature test is generally greater than 5mA, while the leakage under high temperature of automotive-grade three-phase half-bridge is greater than 50mA. HITACH Spec. No. IGBT-SP-05015 R3 specification as an example: ICES typical value of 14mA under 3300V, 125 ℃ test conditions, the maximum of 40mA. proximus The static system high-voltage module test can perfectly cope with the leakage current test requirements of almost all types of devices.

3, in addition, VCE (sat) test is the main parameter to characterize the IGBT conduction power consumption, also has a certain impact on the switching power consumption. Need to use high-speed narrow pulse current source, the rising edge of the pulse speed to be fast enough to reduce the device heat, while the device needs to have synchronized sampling voltage function.

IGBT static test system high current module: 50us-500us adjustable current pulse width, rising edge at 15us (typical), reduce the object to be tested in the test process of heating, so that the test results are more accurate. The following figure shows the 1000A waveform:4, fast and flexible customized fixture solutions: powerful test fixture solutions to ensure operator safety and support a variety of power device package types is extremely important. Regardless of the size or shape of the device, Purcell can quickly respond to user needs and provide flexible customized fixture solutions. The fixtures are characterized by low impedance, easy installation, and a wide variety of features, and can be used for testing diodes, transistors, FETs, IGBTs, SiC MOS, GaN, and other single-tube and module products.