Comprehensive test and measurement service provider-Shenzhen Weike Electronic Technology Co.
- Product Description
- Technical Parameters
- Performance Characteristics
- Optional accessories
- Product Brochure
| model number | Main specifications |
| SP26A | 0.03% accuracy, 200V, 1.5A (DC)/10A (pulse) |
| SP26S010L | 0.1% accuracy, 200V,30A(DC)/100A(Pulse) ,10pA |
| SP26S110L | 0.1% accuracy, 1200V,30A(DC)/100A(pulse) ,10pA |
| SP26CV3 | 10Hz-1MHz |
|
TF Fixture |
Standard: TO247/220/3P.
More test fixtures such as SOT23/89, TO252/263, DFN, etc. are available upon request, please contact us to determine the package. |
Low Voltage Pulsed I-V Source Measurement Unit
- Accuracy 0.1% or 0.03% selectable
- DC, Pulse Working Mode
- Maximum voltage 300V, selectable from 1A or 3A maximum DC, selectable from 10A or 30A maximum pulse current
- Minimum current resolution 1pA
- Maximum pulse width 200μs
- Quadrant Work Intervals
- Supports two-wire, four-wire test mode
- Supports GUARD protection
High-pressure I-V source measurement unit
- Accuracy 0.1%
- Maximum Voltage 1200V, Maximum DC 100mA
- Minimum current resolution 100pA
- Supports two-wire and four-wire test modes
- Supports GUARD protection
High-flow I-V source measurement unit
- Accuracy 0.1%
- DC, Pulse Working Mode
- Maximum pulse width 80μs
- Quadrant Work Intervals
- Maximum Voltage 100V, Maximum DC 30A, Maximum Pulse Current 100A
- Supports two-wire and four-wire test modes
- Minimum current resolution 10pA
- Supports GUARD protection
Voltage Capacitance C-V Measurement Unit
- Basic accuracy 0.5%
- Measurement frequency 10Hz to 3MHz, optionally up to 10MHz
- Supports high-voltage DC bias, up to 1200V bias voltage
- Multi-function AC Performance Test, C-V, C-f, C-t
Module voltage and current source, test indicators
| module (in software) | Low Voltage Pulse I-V Source Measurement Unit | High Voltage I-V Source Measurement Unit | High Current I-V Source Measurement Unit | |
| accurate | 0.02% | 0.10% | 0.10% | |
| Maximum voltage range | 40V/200V | 1200V | 50V | 100V |
| Minimum voltage range | 100mV/200mV | 100V | 300mV | |
| Minimum voltage resolution | 5 μV | 10mV | 30μV | |
|
Maximum current range |
1A (DC) /10A (Pulse) |
100mA |
30A (DC) /50A (Pulse) | 30A (DC)
/100A (pulse) |
| Minimum current range | 100n A | 1μA | 100nA | |
| Minimum current resolution | 2 pA | 100pA | 10pA | |
| Minimum pulse width | 100μs | N/A | 80μs | |
C-V Testing
Capacitance-voltage testing can be used to determine a wide range of semiconductor parameters for many different devices and structures, ranging from MOSCAPs, MOSFETs, bipolar transistors, and JFETs to III-V compound devices,
Photovoltaic (solar) cells, MEMS devices, organic thin-film transistor (TFT) displays, photovoltaic secondaries and carbon nanotubes. The R&D lab extensively evaluates new materials using C-V measurement technology,
The reliability engineers use these measurement techniques to qualify suppliers' materials. Process technicians responsible for product and yield enhancement use them to optimize process and device performance; reliability engineers use such measurements to qualify suppliers' materials (e.g., for the production of new products), and reliability engineers use such measurements to qualify suppliers' materials (e.g., for the production of new products).
The following is a summary of the results of the tests carried out to monitor the technical parameters and to analyze the failure mechanisms.
| sports event | norm |
| Measurement frequency | 10Hz-1MHz |
| Measuring frequency resolution | six-digit |
| Frequency output accuracy | ±0.01% |
| fundamental accuracy | ±0.05% |
| Test Signal Voltage Range | 10mV-2Vrms |
| Voltage Minimum Resolution | 1mV |
| accuracy | ALC OFF: 10% * Setting voltage: ±2mV, ALC
ON: 6% * Setting voltage: ±2mV |
| Test Signal Current Range | 200μA-20mArms |
| Current Minimum Resolution | 10μA |
| accuracy | ALC OFF: 10% * Setting current: ±20μA, ALC
ON: 6% * Setting voltage: ±20μA |
| DC test signal level | 1V (fixed) |
| Output Impedance | 25Ω, 100Ω (switchable) |
|
measured parameter |
|Z|(impedance), |Y|(conductance), θ(phase angle), X(reactance),
R (Series and Parallel Resistance), G (Conductance), B (Banner), L (Inductance), D (Loss Factor), Q (Quality Factor), DCR (DC Resistance), C (Capacitance), Vdc-Idc (DC Voltage Current), ESR (Equivalent Series Resistance), ε (Relative Permeability), μr (Relative Permeability), μr (Relative Magnetism). coefficient) |
System Characteristics
Parametric characterization of semiconductor materials and devices often includes electrical parametric testing. Most parametric tests of semiconductor materials and devices include current-voltage (I-V) measurements. Source Measurement Unit
（The SMU, with four quadrants, multiple ranges, and support for four-wire measurements, is an important tool for semiconductor I-V characterization, as it can be used to output and detect high-precision, weak electrical signals.
The SP26 series is configured with a variety of SMUs, such as low-voltage pulse SMUs and high-current SMUs, which allow users to flexibly configure different sizes and quantities according to their testing needs, thereby balancing testing efficiency and cost.
| Device Type | test parameter |
| thyristor | VBR, IR, VF, IF, Cd, I-V curve, C-V curve, etc. |
| Photodetector PD, APD, SPAD | ID, Ct, VBR, responsiveness R |
|
triode (vacuum tube or transistor) |
V(BR)CEO, V(BR)CBO, V(BR)EBO, ICBO, IEBO, ICES, VCE(sat), VBE(sat), hFE, Cob, Input Characteristic Curve, Output Characteristic Curve, C-V Characteristic Curve |
| Si/SiC
MOSFET GaN HEMT |
V(BR)DSS, VGS(th), IDSS, IGSS,
RDS(on), VSD, Ciss, Coss, Crss, Rg, gfs Transfer characteristic curve, Output characteristic curve, C-V characteristic curve |
|
IGBT |
V(BR)CES, VCE(sat), VF, VGE(th), ICES, IGES, gfs, Cies, Coes, Cres, Transfer Characteristic Curve, Output Characteristic Curve, C-V Characteristic Curve |
| capacitors | IR, C, VBR |
|
optocoupler |
IF, VF, IR, VR, V(BR)CEO, VCE(sat),
ICEO, CT, CCE, CIO, VISO, CTR, Input Characteristic Curve, Output Characteristic Curve, C-V Characteristic Curve |
| makings | Surface resistivity, square resistivity, Hall effect (carrier mobility, carrier concentration, body resistivity) |
| solar cell | VOC, ISC, Pmax, Vmax, Imax, Filling Factor FF, Conversion Efficiency η, Rs, Rsh |
| model number | Main specifications |
| SP26A | 0.03% accuracy, 200V, 1.5A (DC)/10A (pulse) |
| SP26S010L | 0.1% accuracy, 200V,30A(DC)/100A(Pulse) ,10pA |
| SP26S110L | 0.1% accuracy, 1200V,30A(DC)/100A(pulse) ,10pA |
| SP26CV3 | 10Hz-1MHz |
|
TF Fixture |
Standard: TO247/220/3P.
More test fixtures such as SOT23/89, TO252/263, DFN, etc. are available upon request, please contact us to determine the package. |
