Discrete device characterization is the process of applying voltage or current to a device under test (DUT) and then testing its response to the excitation. Typically, discrete device characterization requires several instruments, such as a digital multimeter, a voltage source, a current source, etc. However, a system consisting of several instruments needs to be programmed, synchronized, connected, and analyzed separately. However, a system consisting of several instruments that need to be programmed, synchronized, connected, measured, and analyzed separately is complex, time-consuming, and takes up too much space in the test bench. Furthermore, the use of a single-function test instrument and excitation source has the drawbacks of complex triggering operations between each other, greater uncertainty, and slower bus transfer speeds. One of the best tools for characterizing semiconductor discrete devices is a digital source meter (SMU). The SMU can be used as a stand-alone constant voltage or constant current source, voltmeter, ammeter, and ohmmeter, as well as a precision electronic load, and its high-performance architecture allows it to be used as a pulse generator, waveform generator, and automated current-voltage (I-V) characterization system with four-quadrant operation.
Purcells "5-in-1" High Precision Digital Source Meter
The Purcells "5-in-1" high precision digital SourceMeter (SMU) provides the tools needed by university researchers, device test engineers, and power module design engineers to make measurements. Whether the user is familiar with source meters, bridges, curve tracers, semiconductor parameter analyzers, or oscilloscopes, accurate results can be obtained easily and quickly. This application solution describes the most common tests and challenges associated with semiconductor discrete devices, and how a Purcell Digital SourceMeter (SMU) can simplify the measurement process and help users quickly and accurately obtain test data, or current-voltage (I-V), capacitance-voltage (C-V) characteristic curves, and more.
Diode Characterization Made Easy with Purcell Source Meter
Diode is a kind of unidirectional conductive component made of semiconductor material. The structure of the product is generally a single PN junction structure, which only allows the current to flow in a single direction. Up to now, rectifier diodes, Schottky diodes, fast recovery diodes, PIN diodes, photodiodes and so on have been developed, with safe and reliable characteristics, and are widely used in rectifier, voltage stabilization, protection and other circuits, and are one of the most widely used electronic components in electronic engineering.
IV characteristic is one of the main parameters to characterize the performance of semiconductor diode PN junction preparation, diode IV characteristic mainly refers to the forward and reverse characteristics:
Positive Characteristics::
When a forward voltage is applied across the diode, the forward voltage is very small and the forward current is almost zero at the beginning of the forward characteristic, which is called the deadband. This forward voltage, which does not allow the diode to conduct, is called the deadband voltage. When the forward voltage is greater than the deadband voltage, the diode conducts forward, and the current rises rapidly as the voltage increases. In the current range of normal use, the terminal voltage of the diode remains almost constant during conduction, and this voltage is called the forward voltage of the diode.
Reverse Characterization:
When a reverse voltage is applied, if the voltage does not exceed a certain range, the reverse current is very small and the diode is in the cutoff state, this current is called reverse saturation current or leakage current. When the applied reverse voltage exceeds a certain value, the reverse current will suddenly increase, this phenomenon is called electrical breakdown. This phenomenon is called electrical breakdown. The critical voltage that causes electrical breakdown is called the reverse breakdown voltage of the diode.
The specifications that characterize the diode's performance and range of application mainly include the forward voltage drop (VF), reverse leakage current (IR) and reverse breakdown voltage (VR).
Forward Voltage Drop (V)F)
The forward voltage drop of a diode at a specified forward current is the minimum forward voltage at which the diode can conduct. The forward voltage drop of a low-current silicon diode is about 0.6 to 0.8 V at medium current levels; that of a germanium diode is about 0.2 to 0.3 V; and that of a high-power silicon diode is often as high as 1 V. When testing, it is necessary to choose a different test instrument according to the size of the diode's operating current: when the operating current is less than 1 A, use the S-series source table for measurement; when the current is between 1 and 10 A, use the P-series pulse source table; and when the current is between 10 and 100 A, use the HCP-series high-current table for measurement. When the current is between 1 and 10A, the P series pulse source meter is recommended; when the current is between 10 and 100A, the HCP series high-current benchtop pulse source is recommended; when the current is more than 100A, the HCPL100 high-current pulse power supply is recommended.
Reverse breakdown voltage (V)R)
Diode according to the material and structure of the different size of the breakdown voltage is also different, less than 300V recommended Purcell S series desktop source meter, 300V above the recommended E series of high-voltage source measurement unit.
The resistance of the test leads is not negligible during high-current testing, and it is necessary to use the four-wire measurement mode, which can eliminate the effect of lead resistance, and all of the Purcells source meters support the four-wire measurement mode.
When measuring low level currents (<1μA), triaxial connectors and triaxial cables can be used. The triaxial cable consists of an inner core (main, corresponding to the center contact of the connector), a protective layer (corresponding to the middle cylindrical contact of the connector), and an outer shield. In the test circuit connected to the protective end of the source meter, there is no leakage current due to the equipotentiality between the protective layer and the inner core of the triaxial, which improves the accuracy of the low-current test.
C-V Characterization Test
Diode parameter characterization in addition to I-V test, but also need to carry out C-V test, C-V measurement method can be obtained about the doping concentration of the diode, defects and other characteristics; diode C-V test program by the S series source meter, LCR, test fixture box, and the host computer software.
[Test operation instructions]
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